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Same model may have multiple batches, images only for reference.
PBLS6002D,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBLS6002D,115

Part No PBLS6002D,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN PREBIAS/PNP 0.6W 6TSOP
Datasheet
PBLS6002D,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN Pre-Biased, 1 PNP
Maximum Current Collector 100mA, 700mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V, 60V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 20mA, 5V / 150 @ 500mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA / 340mV @ 100mA, 1A
Collector Cut-off Current(Max) 1μA, 100nA
Frequency - Transition 185MHz
Maximum Power Dissipation 600mW
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1086381-PBLS6002D,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PBLS6002D,115 CAD Model

Description

The Nexperia USA Inc. PBLS6002D,115 is a discrete semiconductor product with a maximum power dissipation of 600mW.

  • Maximum Power Dissipation: 600mW
  • Frequency Transition: 185MHz
  • Transistor Polarity: 1 NPN Pre-Biased, 1 PNP
  • Package: 6-TSOP
  • Maximum Current Collector: 100mA, 700mA
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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