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Same model may have multiple batches, images only for reference.
PBSS3515VS,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS3515VS,115

Part No PBSS3515VS,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 15V 0.5A SOT666
Datasheet
PBSS3515VS,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 15V
Max Vce (sat) 250mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 150 @ 100mA, 2V
Maximum Power Dissipation 200mW
Frequency - Transition 280MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-666
Win Source Part Number 1086433-PBSS3515VS,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PBSS3515VS,115 CAD Model

Description

The Nexperia USA Inc. PBSS3515VS,115 is a dual PNP transistor with a maximum current collector of 500mA and a VCEO maximum collector-emitter breakdown voltage of 15V.

  • Current Collector (Max): 500mA
  • VCEO: 15V
  • Vce (sat) (Max): 250mV @ 50mA, 500mA
  • Collector Cut-off Current(Max): 100nA (ICBO)
  • Gain (hFE) (Min): 150 @ 100mA, 2V
  • Power Dissipation (Max): 200mW
  • Package: SOT-666
  • Usage: Discrete semiconductor products

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