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Same model may have multiple batches, images only for reference.
PBSS4120T,215 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS4120T,215

Part No PBSS4120T,215
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS NPN 20V 1A SOT23
Datasheet
PBSS4120T,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 20V
Max Vce (sat) 250mV @ 50mA, 1A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 300 @ 500mA, 2V
Maximum Power Dissipation 480mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Win Source Part Number 1086462-PBSS4120T,215
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PBSS4120T,215 CAD Model

Description

The Nexperia USA Inc. PBSS4120T,215 is an NPN transistor with a maximum collector current of 1A and a collector-emitter breakdown voltage of 20V.

  • Collector Current (Max): 1A
  • Collector-Emitter Breakdown Voltage: 20V
  • Collector-Emitter Saturation Voltage (Max): 250mV @ 50mA and 1A
  • Collector Cut-Off Current: 100nA (ICBO)
  • Typical Gain: 300 @ 500mA, 2V
  • Power Dissipation (Max): 480mW
  • Package: TO-236AB (SOT23)
  • Supply and Demand Status: Sufficient

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470+ $0.4300 $202.1000
605+ $0.4139 $250.4095
755+ $0.3977 $300.2635
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