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Same model may have multiple batches, images only for reference.
PBSS4160DS,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS4160DS,115

Part No PBSS4160DS,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 60V 1A 6TSOP
Datasheet
PBSS4160DS,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 250mV @ 100mA, 1A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 200 @ 500mA, 5V
Maximum Power Dissipation 420mW
Frequency - Transition 220MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1086470-PBSS4160DS,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PBSS4160DS,115 CAD Model

Description

The Nexperia PBSS4160DS is a dual NPN transistor.

  • Manufacturer: Nexperia
  • Package: 6-TSOP
  • Maximum Current Collector: 1A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
  • Maximum Vce (sat): 250mV @ 100mA and 1A
  • Typical Gain (hFE) (Min): 200 @ 500mA, 5V
  • Collector Cut-Off Current (Max): 100nA
  • Frequency Transition: 220MHz
  • Maximum Power Dissipation: 420mW
  • Applications: Discrete Semiconductor Products
  • Supply and Demand Status: Balanced

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88+ $1.7160 $151.0080
126+ $1.5960 $201.0960
163+ $1.5360 $250.3680
204+ $1.4760 $301.1040
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