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Same model may have multiple batches, images only for reference.
PBSS5140T,215 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS5140T,215

Part No PBSS5140T,215
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 1A SOT23
Datasheet
PBSS5140T,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 500mV @ 100mA, 1A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 300 @ 100mA, 5V
Maximum Power Dissipation 450mW
Frequency - Transition 150MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Win Source Part Number 1086502-PBSS5140T,215
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PBSS5140T,215 CAD Model

Description

The Nexperia PBSS5140T,215 is a PNP transistor with a maximum collector-emitter breakdown voltage of 40V and a maximum current collector of 1A.

  • Collector-Emitter Breakdown Voltage (Max): 40V
  • Current Collector (Max): 1A
  • Typical Gain: 300 @ 100mA, 5V
  • Frequency Transition: 150MHz
  • Maximum Power Dissipation: 450mW
  • Package: TO-236AB (SOT23)
  • Suitable For: Discrete semiconductor products
  • Use Cases: Power management and industrial use

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