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Same model may have multiple batches, images only for reference.
PBSS8110D,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS8110D,115

Part No PBSS8110D,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS NPN 100V 1A 6TSOP
Datasheet
PBSS8110D,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 200mV @ 100mA, 1A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 150 @ 250mA, 10V
Maximum Power Dissipation 700mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1086539-PBSS8110D,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PBSS8110D,115 CAD Model

Description

The PBSS8110D,115 is an NPN transistor from Nexperia USA Inc. with a maximum current collector of 1A and VCEO maximum collector-emitter breakdown voltage of 100V.

  • Maximum Vce (sat): 200mV @ 100mA, 1A
  • Collector Cut-off Current (Max): 100nA
  • Typical Gain (hFE) (Min): 150 @ 250mA, 10V
  • Maximum Power Dissipation: 700mW
  • Operating Temperature Range: 150°C (TJ)
  • Case/Package: 6-TSOP
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
615+ $0.0819 $50.3685
1,490+ $0.0672 $100.1280
2,305+ $0.0651 $150.0555
3,175+ $0.0630 $200.0250
4,110+ $0.0609 $250.2990
5,495+ $0.0546 $300.0270
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Availability: 30,000 pieces
MOQ: 615 pcs
Order Increment : 1 pcs
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