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Same model may have multiple batches, images only for reference.
PDTC123JM,315 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PDTC123JM,315

Part No PDTC123JM,315
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 250MW SOT883
Datasheet
PDTC123JM,315 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 100 @ 10mA, 5V
Max Vce (sat) 100mV @ 250μA, 5mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package DFN1006-3
Win Source Part Number 1087213-PDTC123JM,315
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PDTC123JM,315 CAD Model

Description

The Nexperia USA Inc. PDTC123JM,315 NPN Pre-Biased Transistor is a high-quality electronic component designed for use in various discrete semiconductor products.

  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 250mW
  • Typical Gain: 100 @ 10mA and 5V
  • Supply and Demand: sufficient

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