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Same model may have multiple batches, images only for reference.
PDTC124EU,135 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PDTC124EU,135

Part No PDTC124EU,135
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SOT323
Datasheet
PDTC124EU,135 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 60 @ 5mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA
Frequency - Transition 230MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-323-3
Win Source Part Number 1035590-PDTC124EU,135
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PDTC124EU,135 CAD Model

Description

The PDTC124EU,135 is an NPN pre-biased transistor manufactured by Nexperia USA Inc.

  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Frequency Transition: 230MHz
  • Package: SOT-323-3
  • Typical Gain (hFE): 60 @ 5mA and 5V
  • Maximum Power Dissipation: 200mW

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