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Same model may have multiple batches, images only for reference.
PEMB30,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PEMB30,115

Part No PEMB30,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.3W SOT666
Datasheet
PEMB30,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Typical Gain (hFE) (Min) 30 @ 20mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SOT-666
Win Source Part Number 1087474-PEMB30,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PEMB30,115 CAD Model

Description

The PEMB30,115 is a transistor manufactured by Nexperia USA Inc. that is ideal for use in a wide range of applications.

  • Package: SOT-666
  • Application: Discrete Semiconductor Products
  • Type: 2 PNP - Pre-Biased (Dual)
  • Collector-Emitter Breakdown Voltage: 50V
  • Power Dissipation: 300mW
  • Maximum Current Collector: 100mA
  • Maximum Collector Cut-off Current: 1μA
  • Typical Gain (hFE) (Min): 30 @ 20mA, 5V
  • Maximum Vce (sat): 150mV @ 500μA, 10mA
  • Status: Active
  • Popularity: Medium
  • Supply and Demand: Sufficient

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