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Same model may have multiple batches, images only for reference.
PHD9NQ20T,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PHD9NQ20T,118

Part No PHD9NQ20T,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 8.7A DPAK
Datasheet
PHD9NQ20T,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 959pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 88W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 4.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1087807-PHD9NQ20T,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHD9NQ20T,118 CAD Model

Description

The Nexperia USA Inc. PHD9NQ20T,118 is an N-channel MOSFET transistor with a breakdown voltage of 200V.

  • Power Dissipation: 88W @ Tc
  • Drive Voltage: 10V
  • Package: DPAK
  • Continuous Drain Current: 8.7A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 24nC @ 10V
  • Maximum Input Capacitance: 959pF @ 25V
  • Maximum Rds On: 400 mOhm @ 4.5A, 10V

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