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Same model may have multiple batches, images only for reference.
PHPT61006NYX Real Image
Same model may have multiple batches, images only for reference.

PHPT61006NYX

Part No PHPT61006NYX
Manufacturer Nexperia USA Inc.
Catalog RF Transistors (BJT)
Description TRANS NPN 100V 6A LFPAK56 PWRSO8  /  Bipolar (BJT) Transistor NPN 100 V 6 A 170MHz 1.3 W Surface Mount LFPAK56, Power-SO8
Datasheet
PHPT61006NYX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Nexperia USA Inc.
Package Tape & Reel
Transistor Type NPN
Current - Collector (Ic) (Max) 6 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 340mV @ 600mA, 6A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 500mA, 2V
Power - Max 1.3 W
Frequency - Transition 170MHz
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Package / Case SC-100, SOT-669
Supplier Device Package LFPAK56, Power-SO8
Base Product Number PHPT61006
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names 1727-2270-2,568-12556-6-ND,934068574115,568-12556-6,1727-2270-6,568-12556-2-ND,568-12556-1,568-12556-1-ND,2156-PHPT61006NYX-NEX,NEXNXPPHPT61006NYX,568-12556-2,1727-2270-1
Standard Package 1,500
Win Source Part Number 973261-PHPT61006NYX
Ultra Librarian 3D Model Ultra Librarian PHPT61006NYX CAD Model

Description

The Nexperia USA Inc. PHPT61006NYX is an NPN bipolar junction transistor designed for use in discrete semiconductor products. With a maximum power of 1.3 W and a voltage breakdown of 100 V, this transistor is capable of handling high loads.

  • Maximum Power: 1.3 W
  • Voltage Breakdown: 100 V
  • Vce Saturation: 340mV @ 600mA and 6A
  • DC Current Gain: 140 @ 500mA and 2V
  • Mounting Type: Surface Mount Technology (SMT)
  • Package: SC-100, SOT-669, LFPAK56, Power-SO8
  • Temperature Range: Up to 175°C (TJ)

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