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Same model may have multiple batches, images only for reference.
PIMD3,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PIMD3,115

Part No PIMD3,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.6W 6TSOP
Datasheet
PIMD3,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 30 @ 5mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 600mW
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1089286-PIMD3,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PIMD3,115 CAD Model

Description

The PIMD3,115 is a dual pre-biased NPN and PNP transistor from Nexperia USA Inc.

  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 600mW
  • Collector Cut-Off Current: 1μA
  • Typical Gain (hFE): 30 @ 5mA and 5V
  • Maximum Voltage Collector-Emitter Saturation: 150mV @ 500μA and 10mA
  • Base Resistor (R1): 10k
  • Emitter-Base Resistor (R2): 10k
  • Package: 6-TSOP
  • Mounting: SMD (SMT)
  • Maximum Current Collector: 100mA
  • Application: audio amplifiers and switching circuits

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