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DMN10H170SFG-13

Part No DMN10H170SFG-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V PWRDI3333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 100 V 2.9A (Ta), 8.5A (Tc) 940mW (Ta) Surface Mount PowerDI3333-8
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerVDFN
Case / Package PowerDI3333-8
Family Name DMN10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number DMN10H170SFG-13DKR-ND, DMN10H170SFG-13CT-ND, DMN10H170SFG-13DICT, DMN10H170SFG-13DITR, DMN10H170SFG-13TR-ND, DMN10H170SFG-13CT, DMN10H170SFG-13DKR, DMN10H170SFG-13TR, DMN10H170SFG-13DIDKR
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 868928-DMN10H170SFG-13
Ultra Librarian 3D Model Ultra Librarian DMN10H170SFG-13 CAD Model

Description

Product Overview: DMN10H170SFG-13 by Diodes Incorporated

The DMN10H170SFG-13 is a high-performance, N-channel enhancement mode MOSFET designed and produced by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is a testament to Diodes Incorporated's commitment to providing energy-efficient and reliable components for a wide range of electronic applications.

The device boasts a 100V drain-source voltage (V<sub>DS), which makes it suitable for high-voltage applications. The DMN10H170SFG-13 is capable of delivering continuous drain current (I<sub>D) of up to 3.7A, ensuring that it can handle significant power for its size. The product comes in a compact, surface-mount PowerDI®5 package, which is designed for optimal thermal performance and space-saving on the PCB.

With a low on-resistance (R<sub>DS(on)) of just 170 mOhms at V<sub>GS = 10V, the DMN10H170SFG-13 ensures high efficiency, which is crucial for reducing power losses in circuits. This characteristic, along with its fast switching speed, makes the MOSFET an excellent choice for power management tasks, such as DC-DC conversion, load switching, and motor control in consumer, industrial, and automotive applications.

The DMN10H170SFG-13 also features a maximum power dissipation of 1.4W, which contributes to its robust performance in demanding environments. Additionally, the device is characterized by a low gate charge (Q<sub>G), which reduces switching losses and enhances the overall efficiency of the application it is used in.

Diodes Incorporated has designed the DMN10H170SFG-13 with reliability in mind. It is RoHS compliant and free from Halogen, ensuring that it meets environmental standards and is suitable for use in eco-conscious products. Its high reliability and durability make it a preferred choice for designers looking to create high-quality, long-lasting electronic products.

In summary, the DMN10H170SFG-13 MOSFET from Diodes Incorporated is a versatile and efficient component that offers excellent thermal performance, high current capability, and energy-saving features. It is an ideal choice for engineers aiming to optimize their power management systems in various electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.2578 $50.2710
415+ $0.2412 $100.0980
645+ $0.2329 $150.2205
925+ $0.2163 $200.0775
1,205+ $0.2080 $250.6400
1,505+ $0.1996 $300.3980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,330 pieces
MOQ: 195 pcs
Order Increment : 1 pcs
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