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Same model may have multiple batches, images only for reference.
PMBT3906VS,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMBT3906VS,115

Part No PMBT3906VS,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 40V 0.2A SOT666
Datasheet
PMBT3906VS,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 400mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 360mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-666
Win Source Part Number 1089482-PMBT3906VS,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMBT3906VS,115 CAD Model

Description

The Nexperia USA Inc. PMBT3906VS,115 is a dual PNP transistor with a maximum collector-emitter breakdown voltage of 40V.

  • Maximum Collector-Emitter Breakdown Voltage: 40V
  • Category: Discrete Semiconductor Products
  • Maximum Current Collector: 200mA
  • Package: SOT-666
  • Maximum Power Dissipation: 360mW
  • Typical Gain (hFE): 100 @ 10mA, 1V
  • Maximum Vce (sat): 400mV @ 5mA, 50mA
  • Collector Cut-off Current (Max): 50nA (ICBO)
  • Frequency Transition: 250MHz
  • Supply and Demand Status: Sufficient

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