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Same model may have multiple batches, images only for reference.
PMDPB58UPE,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMDPB58UPE,115

Part No PMDPB58UPE,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 3.6A HUSON6
Datasheet
PMDPB58UPE,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.6A
Maximum Rds On at Id,Vgs 67 mOhm @ 2A, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 9.5nC @ 4.5V
Max Input Capacitance 804pF @ 10V
Maximum Power Dissipation 515mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN2020-6
Win Source Part Number 1089512-PMDPB58UPE,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMDPB58UPE,115 CAD Model

Description

The Nexperia USA Inc. PMDPB58UPE,115 is a 2 P-Channel (Dual) FET type with a logic level gate.

  • FET Type: 2 P-Channel (Dual)
  • Gate Type: Logic Level
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 515mW
  • Widely Used In: Various discrete semiconductor products applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1304 $50.8680
110+ $0.9276 $102.0360
170+ $0.8986 $152.7620
230+ $0.8696 $200.0080
300+ $0.8406 $252.1800
400+ $0.7536 $301.4400
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