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Same model may have multiple batches, images only for reference.
PMDXB600UNE Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMDXB600UNE

Part No PMDXB600UNE
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.6A 6DFN
Datasheet
PMDXB600UNE Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 600mA
Maximum Rds On at Id,Vgs 620 mOhm @ 600mA, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 0.7nC @ 4.5V
Max Input Capacitance 21.3pF @ 10V
Maximum Power Dissipation 265mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-DFN (1.1x1)
Win Source Part Number 1089519-PMDXB600UNE
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMDXB600UNE CAD Model

Description

The Nexperia USA Inc PMDXB600UNE is a dual N-channel logic level gate FET.

  • Power Dissipation: 265mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 600mA
  • Gate-Source Threshold Voltage: 950mV @ 250μA
  • Maximum Gate Charge: 0.7nC @ 4.5V
  • Maximum Input Capacitance: 21.3pF @ 10V
  • Maximum Rds On @ Id,Vgs: 620 mOhm @ 600mA, 4.5V
  • Package: 6-DFN (1.1x1)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Application: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1415 $50.2325
755+ $0.1326 $100.1130
1,175+ $0.1281 $150.5175
1,680+ $0.1192 $200.2560
2,180+ $0.1147 $250.0460
2,725+ $0.1102 $300.2950
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