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Same model may have multiple batches, images only for reference.
PMN42XPE,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMN42XPE,115

Part No PMN42XPE,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4A 6TSOP
Datasheet
PMN42XPE,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.25V @ 250μA
Max Gate Charge 17.3nC @ 4.5V
Max Input Capacitance 1410pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 500mW (Ta), 8.33W (Tc)
Maximum Rds On at Id,Vgs 46 mOhm @ 3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SC-74, SOT-457
Win Source Part Number 1089708-PMN42XPE,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMN42XPE,115 CAD Model

Description

Nexperia USA Inc. is a leading manufacturer of MOSFET transistors.

  • Product Name: PMN42XPE,115
  • Channel Type: P-channel
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Continuous Drain Current (25°C): 4A (Ta)
  • Maximum Rds On @ Id, Vgs: 46 mOhm @ 3A, 4.5V
  • Maximum Gate-Source Voltage: ±12V
  • Package: 6-TSOP (SC-74, SOT-457)
  • Supply and Demand Status: Balanced
  • Popularity: Medium

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