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Same model may have multiple batches, images only for reference.
PMN50UPE,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMN50UPE,115

Part No PMN50UPE,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.6A 6TSOP
Datasheet
PMN50UPE,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 15.7nC @ 10V
Max Input Capacitance 24pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 510mW (Ta)
Maximum Rds On at Id,Vgs 66 mOhm @ 3.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SC-74, SOT-457
Win Source Part Number 1089713-PMN50UPE,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMN50UPE,115 CAD Model

Description

The Nexperia USA Inc. P-Channel MOSFET is a discrete semiconductor product that is used in electronic circuits.

  • Mounting Type: SMD (SMT)
  • Case/Package: 6-TSOP
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 3.6A (Ta)
  • Gate-Source Threshold Voltage: 900mV @ 250μA
  • Maximum Gate Charge: 15.7nC @ 10V
  • Maximum Input Capacitance: 24pF @ 10V
  • Maximum Rds On at Id,Vgs: 66 mOhm @ 3.6A, 4.5V
  • Maximum Power Dissipation: 510mW (Ta)
  • Use: Widely used in discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9101 $59.1565
155+ $0.7473 $115.8315
240+ $0.7242 $173.8080
335+ $0.6999 $234.4665
430+ $0.6768 $291.0240
575+ $0.6075 $349.3125
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