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Same model may have multiple batches, images only for reference.
PMPB20XNEAZ Real Image
Same model may have multiple batches, images only for reference.

PMPB20XNEAZ

Part No PMPB20XNEAZ
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 7.5A DFN2020MD-6  /  N-Channel 20 V 7.5A (Ta) 460mW (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
Datasheet
PMPB20XNEAZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 20mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 930 pF @ 10 V
Power Dissipation (Max) 460mW (Ta), 12.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package DFN2020MD-6
Package / Case 6-UDFN Exposed Pad
Base Product Number PMPB20
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names PMPB20XNEAZ-ND,1727-8339-2,934069561184,1727-8339-6,1727-8339-1
Standard Package 3,000
Win Source Part Number 1126969-PMPB20XNEAZ
Ultra Librarian 3D Model Ultra Librarian PMPB20XNEAZ CAD Model

Description

The PMPB20XNEAZ is a high-quality N-Channel MOSFET transistor designed for use in electronic circuits that require high precision and accuracy manufactured by Nexperia USA Inc.

  • Series: This component belongs to the Automotive, AEC-Q101 series
  • Drain to Source Voltage: has a maximum drain to source voltage of 20 V.
  • Power Dissipation: With a maximum power dissipation of 460mW (Ta), this component is highly efficient and reliable.
  • Package/Case: It has a unique package/ case of 6-UDFN Exposed Pad
  • Gate Charge: has a gate charge (Qg) (Max) @ Vgs of 15 nC @ 4.5 V.

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