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PMPB215ENEAX

Part No PMPB215ENEAX
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 1.9A DFN2020MD-6  /  N-Channel 80 V 1.9A (Ta) 1.6W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 215 pF @ 40 V
Power Dissipation (Max) 1.6W (Ta), 15.6W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package DFN2020MD-6
Package / Case 6-UDFN Exposed Pad
Base Product Number PMPB215
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 1727-8340-2,1727-8340-1,934067477115,1727-8340-6,PMPB215ENEAX-ND
Standard Package 3,000
Win Source Part Number 1117831-PMPB215ENEAX
Ultra Librarian 3D Model Ultra Librarian PMPB215ENEAX CAD Model

Description

The Nexperia USA Inc. PMPB215ENEAX MOSFET is a high-performance N-channel transistor that comes in a 6-UDFN exposed pad package.

  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current Rating: 1.9A (Ta)
  • Maximum Rds On: 230mOhm @ 1.9A, 10V
  • Series: Automotive, AEC-Q101
  • Category: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4553 $50.9355
85+ $1.1941 $101.4985
130+ $1.1568 $150.3840
180+ $1.1195 $201.5100
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 39,000 pieces
MOQ: 35 pcs
Order Increment : 3000 pcs
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