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Same model may have multiple batches, images only for reference.
PMV213SN,215 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMV213SN,215

Part No PMV213SN,215
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 1.9A SOT23
Datasheet
PMV213SN,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 330pF @ 20V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 280mW (Tj)
Maximum Rds On at Id,Vgs 250 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1089781-PMV213SN,215
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMV213SN,215 CAD Model

Description

The Nexperia USA Inc. PMV213SN,215 is an N-Channel MOSFET that belongs to the Discrete Semiconductor Products category.

  • Drain-Source Breakdown Voltage: up to 100V
  • Continuous Drain Current: up to 1.9A (Tc)
  • Maximum Rds On @ Id,Vgs: 250 mOhm @ 500mA, 10V
  • Applications: power supplies, motor drives, and lighting systems

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6891 $51.6825
155+ $0.6455 $100.0525
245+ $0.6237 $152.8065
345+ $0.5800 $200.1000
450+ $0.5582 $251.1900
560+ $0.5364 $300.3840
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