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PMV30UN2R

Part No PMV30UN2R
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V SOT23
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 655pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 490mW (Ta), 5W (Tc)
Maximum Rds On at Id,Vgs 32 mOhm @ 4.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1089787-PMV30UN2R
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMV30UN2R CAD Model

Description

The PMV30UN2R from Nexperia USA Inc. is an N-channel MOSFET that comes in a TO-236AB (SOT23) package.

  • Power Dissipation (Max): 490mW (Ta), 5W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 4.2A (Ta)
  • Gate-Source Threshold Voltage: 900mV @ 250μA
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2376 $51.0840
450+ $0.2226 $100.1700
700+ $0.2151 $150.5700
1,000+ $0.2000 $200.0000
1,300+ $0.1925 $250.2500
1,625+ $0.1850 $300.6250
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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