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PMV32UP,215

Part No PMV32UP,215
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 15.5nC @ 4.5V
Max Input Capacitance 1890pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 510mW (Ta)
Maximum Rds On at Id,Vgs 36 mOhm @ 2.4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1089789-PMV32UP,215
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMV32UP,215 CAD Model

Description

The PMV32UP,215 is a P-channel MOSFET with a maximum drain-source breakdown voltage of 20V and a continuous drain current @ 25°C of 4A (Ta).

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 4A (Ta)
  • Gate-Source Threshold Voltage: 950mV @ 250μA
  • Maximum Gate Charge: 15.5nC @ 4.5V
  • Maximum Input Capacitance: 1890pF @ 10V
  • Mounting: SMD (SMT) technology
  • Case: TO-236AB (SOT23)
  • Power Dissipation: 510mW (Ta)
  • Drive Voltage (max Rds On, min Rds On): 1.8V, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2933 $51.3275
420+ $0.2407 $101.0940
645+ $0.2331 $150.3495
890+ $0.2256 $200.7840
1,150+ $0.2181 $250.8150
1,535+ $0.1955 $300.0925
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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