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Same model may have multiple batches, images only for reference.
PMV40UN2R Real Image
Same model may have multiple batches, images only for reference.

PMV40UN2R

Part No PMV40UN2R
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 3.7A SOT23
Datasheet
PMV40UN2R Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 12nC @ 4.5V
Max Input Capacitance 635pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 490mW (Ta)
Maximum Rds On at Id,Vgs 44 mOhm @ 3.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1089793-PMV40UN2R
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMV40UN2R CAD Model

Description

The PMV40UN2R is an N-channel MOSFET designed for low voltage applications from Nexperia USA Inc.

  • Maximum Drain-Source Voltage: 30V
  • Continuous Drain Current: 3.7A
  • Applications: Power management, load switching, and battery protection applications.
  • Gate Threshold Voltage: 900mV
  • On-State Resistance: 44mOhm
  • Package: SOT-23-3
  • RoHS compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.1920 $50.8800
560+ $0.1799 $100.7440
865+ $0.1738 $150.3370
1,240+ $0.1616 $200.3840
1,610+ $0.1556 $250.5160
2,010+ $0.1495 $300.4950
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Availability: 304,030 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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