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PMV55ENEAR

Part No PMV55ENEAR
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V TO-236AB
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.7V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 646pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 478mW (Ta), 8.36W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 3.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1089801-PMV55ENEAR
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PMV55ENEAR CAD Model

Description

The Nexperia USA Inc. PMV55ENEAR is an active N-Channel MOSFET with a maximum power dissipation of 478mW (Ta), 8.36W (Tc).

  • Category: Discrete Semiconductor Products
  • Package: TO-236AB (SOT23)
  • Mounting: SMD (SMT)
  • Dimension: TO-236-3, SC-59, SOT-23-3
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 3.1A (Ta) @ 25°C
  • Maximum Rds On: 60 mOhm @ 3.1A, 10V
  • Supply and Demand Status: Limited
  • Gate-Source Threshold Voltage: 2.7V @ 250μA
  • Max Gate Charge: 19nC @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Max Input Capacitance: 646pF @ 30V

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4717 $51.8870
230+ $0.4418 $101.6140
355+ $0.4269 $151.5495
505+ $0.3971 $200.5355
655+ $0.3821 $250.2755
820+ $0.3672 $301.1040
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Availability: 39,440 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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