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PMV65UNER Real Image PMV65UNER Real Image1 PMV65UNER Real Image2
Same model may have multiple batches, images only for reference.
PMV65UNER Real Image PMV65UNER Real Image1 PMV65UNER Real Image2
PMV65UNER Real Image PMV65UNER Real Image1 PMV65UNER Real Image2
Same model may have multiple batches, images only for reference.

PMV65UNER

Part No PMV65UNER
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V TO-236AB
Datasheet
PMV65UNER Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 6nC @ 10V
Max Input Capacitance 291pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 490mW (Ta)
Maximum Rds On at Id,Vgs 73 mOhm @ 2.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1089803-PMV65UNER
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMV65UNER CAD Model

Description

The Nexperia PMV65UNER is a high-performance N-Channel MOSFET that is designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 490mW (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On: 73 mOhm @ 2.8A, 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Gate Charge: 6nC @ 10V
  • Package: TO-236AB
  • Dimensions: TO-236-3, SC-59, SOT-23-3
  • Mounting Technology: SMD (SMT)
  • Applications: power management, automotive, and industrial applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3538 $51.3010
305+ $0.3314 $101.0770
470+ $0.3202 $150.4940
675+ $0.2978 $201.0150
875+ $0.2866 $250.7750
1,090+ $0.2754 $300.1860
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