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Same model may have multiple batches, images only for reference.
PSMN005-30K,518 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN005-30K,518

Part No PSMN005-30K,518
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A SOT96-1
Datasheet
PSMN005-30K,518 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 34nC @ 4.5V
Max Input Capacitance 3100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.5W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1090316-PSMN005-30K,518
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN005-30K,518 CAD Model

Description

The Nexperia USA Inc. PSMN005-30K,518 is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 20A @ 25°C.

  • Manufacturer: Nexperia USA Inc.
  • Product Name: PSMN005-30K,518
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 20A @ 25°C
  • Maximum Power Dissipation: 3.5W (Tc)
  • Mounting Technology: SMD (SMT)
  • Maximum Rds On @ Id, Vgs: 5.5 mOhm @ 15A, 10V
  • Gate-Source Threshold Voltage: 3V @ 1mA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 34nC @ 4.5V
  • Operating Temperature: -55°C to 150°C
  • Supply and demand status: balanced

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