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Same model may have multiple batches, images only for reference.
PSMN016-100BS,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN016-100BS,118

Part No PSMN016-100BS,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 57A D2PAK
Datasheet
PSMN016-100BS,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 57A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 49nC @ 10V
Max Input Capacitance 2404pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 148W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1090328-PSMN016-100BS,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN016-100BS,118 CAD Model

Description

The Nexperia USA Inc. PSMN016-100BS,118 is an N-Channel MOSFET with a drain-source breakdown voltage of 100V.

  • Mounting: SMD (SMT)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Maximum Rds On @ Id,Vgs: 16 mOhm @ 15A and 10V
  • Maximum Gate-Source Voltage: ±20V
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: D2PAK
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Maximum Power Dissipation: 148W (Tc)
  • Maximum Gate Charge: 49nC @ 10V

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Quantity Unit Price Ext. Price
24+ $2.1016 $50.4384
58+ $1.7244 $100.0152
90+ $1.6705 $150.3450
124+ $1.6166 $200.4584
160+ $1.5627 $250.0320
215+ $1.4011 $301.2365
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