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Same model may have multiple batches, images only for reference.
PSMN1R8-30BL,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN1R8-30BL,118

Part No PSMN1R8-30BL,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A D2PAK / Trans MOSFET N-CH 30V 100A 3-Pin(2+Tab) D2PAK T/R
Datasheet
PSMN1R8-30BL,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.15V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 170nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 10180pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 270W (Tc)
Rds On (Maximum) @ Id, Vgs 1.8 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 792620-PSMN1R8-30BL,118
Popularity Medium
Supply and Demand Status Limited
Family Name PSMN1R8-30BL
Introduction Date March 22, 2012
ECCN EAR99
Country of Origin Philippines
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian PSMN1R8-30BL,118 CAD Model

Description

The Nexperia PSMN1R8-30BL is an N-channel MOSFET designed for use in discrete semiconductor products. Nexperia USA Inc..

  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Continuous Drain Current: 100A @ 25°C
  • Drain-Source Voltage: 30V
  • Gate-Source Voltage: ±20V
  • Power Dissipation: 270W @ Tc
  • Rds On: 1.8 mOhm @ 25A, 10V
  • Supply and Demand Status: Limited
  • Alternative Parts: IPB120N03S4L-03, STB155N3H6, NP88N03KUG-E1-AY
  • Estimated End-of-Life Date: 2028

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