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Same model may have multiple batches, images only for reference.
PSMN2R0-30YL,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN2R0-30YL,115

Part No PSMN2R0-30YL,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A LFPAK / Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R
Datasheet
PSMN2R0-30YL,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Series TrenchMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.15V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 64nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3980pF @ 12V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 97W (Tc)
Rds On (Maximum) @ Id, Vgs 2 mOhm @ 15A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package LFPAK56, Power-SO8
Package SC-100, SOT-669
Win Source Part Number 792621-PSMN2R0-30YL,115
Popularity Medium
Supply and Demand Status Limited
Family Name PSMN2R0-30
ECCN EAR99
Country of Origin Philippines
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian PSMN2R0-30YL,115 CAD Model

Description

The Nexperia USA Inc. PSMN2R0-30YL,115 is a MOSFET transistor that belongs to the TrenchMOS series.

  • Maximum Power Dissipation: 97W (Tc)
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Packaging: SC-100, SOT-669
  • Mounting Type: SMD
  • Drain Source Voltage: 30V
  • Gate Charge (Qg) (Maximum) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 3980pF @ 12V

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170+ $1.4706 $250.0020
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