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Same model may have multiple batches, images only for reference.
PSMN2R2-25YLC,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN2R2-25YLC,115

Part No PSMN2R2-25YLC,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 100A LFPAK
Datasheet
PSMN2R2-25YLC,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.95V @ 1mA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 2542pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 106W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 1090384-PSMN2R2-25YLC,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN2R2-25YLC,115 CAD Model

Description

The PSMN2R2-25YLC,115 is an N-channel MOSFET from Nexperia USA Inc.

  • Drain-Source Breakdown Voltage: 25V
  • Maximum Continuous Drain Current (25°C): 100A
  • Maximum Power Dissipation: 106W (Tc)
  • Temperature Range: -55°C to 175°C
  • Package: LFPAK56, Power-SO8
  • Dimensions: SC-100, SOT-669
  • Gate-Source Threshold Voltage: 1.95V @ 1mA
  • Maximum Rds On: 2.4 mOhm @ 25A, 10V
  • Ideal for: Use in discrete semiconductor products.

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