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Same model may have multiple batches, images only for reference.
PSMN2R6-40YS,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN2R6-40YS,115

Part No PSMN2R6-40YS,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A LFPAK
Datasheet
PSMN2R6-40YS,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 3776pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 131W (Tc)
Maximum Rds On at Id,Vgs 2.8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 1090392-PSMN2R6-40YS,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN2R6-40YS,115 CAD Model

Description

The Nexperia USA Inc. PSMN2R6-40YS,115 is an N-channel MOSFET integrated circuit.

  • Package: LFPAK56, Power-SO8
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 100A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 63nC @ 10V
  • Maximum Input Capacitance: 3776pF @ 12V
  • Maximum Rds On @ Id,Vgs: 2.8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C to 175°C
  • Suitable For: Discrete Semiconductor Products

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190+ $0.9270 $176.1300
260+ $0.8971 $233.2460
335+ $0.8672 $290.5120
450+ $0.7775 $349.8750
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