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PSMN3R9-60PSQ

Part No PSMN3R9-60PSQ
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V SOT78
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 103nC @ 10V
Max Input Capacitance 5600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 263W (Tc)
Maximum Rds On at Id,Vgs 3.9 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1090408-PSMN3R9-60PSQ
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name PSMN3R9-60PS
Introduction Date September 27, 2012
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian PSMN3R9-60PSQ CAD Model

Description

The PSMN3R9-60PSQ is an N-Channel MOSFET designed for use in various electronic circuits.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: up to 130A @ 25°C
  • Maximum Rds On: 3.9 mOhm @ 25A and 10V gate-source voltage
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Max Gate Charge: 103nC @ 10V
  • Package: TO-220AB
  • Temperature Range: -55°C to 175°C
  • Popularity: high-popularity

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.6506 $53.2048
19+ $5.4569 $103.6811
29+ $5.2864 $153.3056
40+ $5.1158 $204.6320
51+ $4.9453 $252.2103
68+ $4.4337 $301.4916
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 4,000 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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