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Same model may have multiple batches, images only for reference.
PSMN4R6-60PS,127 NXP
Same model may have multiple batches, images only for reference.

PSMN4R6-60PS,127

Part No PSMN4R6-60PS,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A TO220AB / N-Channel 60 V 100A (Tc) 211W (Tc) Through Hole TO-220AB
Datasheet
PSMN4R6-60PS,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Nexperia USA Inc.
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 70.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4426 pF @ 30 V
Power Dissipation (Max) 211W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number PSMN4R6
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1024880-PSMN4R6-60PS,127
Ultra Librarian 3D Model Ultra Librarian PSMN4R6-60PS,127 CAD Model

Description

The 1024880-PSMN4R6-60PS,127 is a N-Channel MOSFET transistor from Nexperia USA Inc.

  • Drain-to-Source Voltage Rating: 60V
  • Continuous Drain Current Rating: 100A @ 25°C
  • On-Resistance: 4.6mOhm @ 25A
  • Gate Threshold Voltage: 4V
  • Package: TO-220-3
  • Gate Charge: 70.8nC @ 10V
  • Input Capacitance: 4426pF @ 30V
  • Temperature Range: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5870 $63.4800
90+ $1.3017 $117.1530
140+ $1.2613 $176.5820
190+ $1.2208 $231.9520
245+ $1.1804 $289.1980
330+ $1.0580 $349.1400
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