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PSMN6R1-30YLDX

Part No PSMN6R1-30YLDX
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 66A LFPAK56  /  N-Channel 30 V 66A (Tc) 47W (Tc) Surface Mount LFPAK56, Power-SO8
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Nexperia USA Inc.
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 13.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 817 pF @ 15 V
Power Dissipation (Max) 47W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
Base Product Number PSMN6R1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 568-11434-2-ND,568-11434-2,568-11434-1,1727-1818-6,568-11434-6-ND,1727-1818-2,1727-1818-1,934067798115,568-11434-1-ND,568-11434-6
Standard Package 1,500
Win Source Part Number 1086143-PSMN6R1-30YLDX
Ultra Librarian 3D Model Ultra Librarian PSMN6R1-30YLDX CAD Model

Description

The PSMN6R1-30YLDX is a MOSFET transistor that is a part of the Discrete Semiconductor Products category.

  • FET Type: N-Channel
  • Drain to Source Voltage: 30 V
  • Continuous Drain Current: 66A @ 25°C
  • Rds On (Max): 6mOhm @ 15A, 10V
  • Package: SC-100, SOT-669
  • Supplier Device Package: LFPAK56, Power-SO8
  • Gate Charge: 13.6 nC @ 10 V
  • Input Capacitance: 817 pF @ 15 V
  • Temperature Range: -55°C ~ 175°C (TJ)
  • Power Dissipation: 47W (Tc)

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