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PSMNR60-25YLHX

Part No PSMNR60-25YLHX
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 300A LFPAK56 / N-Channel 300A (Ta) 268W (Ta) Surface Mount LFPAK56, Power-SO8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Nexperia USA Inc.
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 300A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 700mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 147 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8117 pF @ 12 V
FET Feature -
Power Dissipation (Max) 268W (Ta)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
Base Product Number PSMNR60
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1352726-PSMNR60-25YLHX
Ultra Librarian 3D Model Ultra Librarian PSMNR60-25YLHX CAD Model

Description

The 1352726-PSMNR60-25YLHX is a N-channel MOSFET transistor from Nexperia USA Inc.

  • Temperature Range: -55°C to 175°C
  • Package: SC-100, SOT-669 (LFPAK56 or Power-SO8)
  • Continuous Drain Current: 300A @ 25°C
  • Gate-Source Voltage (Vgs): ±20V
  • On-Resistance (Rds On): 700mOhm @ 25A and 10V
  • Gate Charge (Qg): 147nC @ 10V
  • Power Dissipation: 268W

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7463 $52.3890
70+ $1.4329 $100.3030
110+ $1.3881 $152.6910
150+ $1.3433 $201.4950
195+ $1.2986 $253.2270
260+ $1.1642 $302.6920
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Availability: 3,683 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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