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Same model may have multiple batches, images only for reference.
2N6730
Same model may have multiple batches, images only for reference.

2N6730

Part No 2N6730
Manufacturer NTE
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 2A TO237
Datasheet
2N6730 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr NTE
Package Bag
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 50mA, 1V
Power - Max 1 W
Frequency - Transition 500MHz
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-237AA
Supplier Device Package TO-237
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 854989-2N6730
Ultra Librarian 3D Model Ultra Librarian 2N6730 CAD Model

Description

The 2N6730 is a PNP bipolar transistor designed for high-frequency applications.

  • Transistor Type: PNP
  • Power: 1 W
  • Voltage Breakdown: 100 V
  • Collector Current: 2 A
  • Vce Saturation: 500mV @ 10mA base current and 250mA collector current
  • DC Current Gain (hFE): 80 @ 50mA collector current and 1V voltage
  • Frequency Transition: 500MHz
  • Mounting Type: Through Hole
  • Package: TO-237AA
  • Temperature Range: -65°C to 150°C
  • Manufacturer: NTE
  • Status: Active

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Quantity Unit Price Ext. Price
60+ $1.0095 $60.5700
140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
300+ $0.7762 $232.8600
385+ $0.7508 $289.0580
515+ $0.6734 $346.8010
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