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A2I20H060GNR1

Part No A2I20H060GNR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description IC TRANS RF LDMOS / RF Mosfet 28 V 24 mA 1.84GHz 28.9dB 12W TO-270WBG-15
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Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP USA Inc.
Package Tape & Reel
Technology LDMOS
Configuration Dual
Frequency 1.84GHz
Gain 28.9dB
Voltage - Test 28 V
Current - Test 24 mA
Power - Output 12W
Voltage - Rated 65 V
Mounting Type Surface Mount
Package / Case TO-270-15 Variant, Gull Wing
Supplier Device Package TO-270WBG-15
Base Product Number A2I20
Standard Package 500
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.33.0001
Win Source Part Number 1336919-A2I20H060GNR1
Ultra Librarian 3D Model Ultra Librarian A2I20H060GNR1 CAD Model

Description

The A2I20H060GNR1 is a cutting-edge RF power transistor from the renowned manufacturer NXP Semiconductors. Designed for high-performance applications, this device is a part of NXP's Airfast RF power solutions. The A2I20H060GNR1 is engineered to deliver exceptional efficiency and gain while maintaining high ruggedness and reliability, making it an ideal choice for a wide range of RF energy applications.

Key Features

  • Frequency Range: This device operates at a frequency range that is perfect for various high-frequency applications, providing a versatile solution for designers.
  • Output Power: With an impressive output power capability, the A2I20H060GNR1 is capable of driving high-power circuits, making it suitable for demanding environments.
  • Efficiency: The transistor is designed for high efficiency, ensuring minimal power loss during operation and leading to more sustainable and cost-effective designs.
  • Ruggedness: Durability is a key aspect of the A2I20H060GNR1, which can withstand severe conditions without performance degradation, offering a robust solution for industrial applications.

Applications

The A2I20H060GNR1 is versatile and can be used in various applications, including but not limited to:

  • Industrial heating and drying systems, where its high power and efficiency can lead to faster processing times and reduced energy consumption.
  • Medical applications such as MRI and RF ablation, where reliability and consistent performance are critical for patient safety and equipment longevity.
  • RF energy-based cooking where precision and control are required to achieve the desired culinary results.
  • Plasma generation for semiconductor processing, where stable and reliable RF power is necessary for consistent manufacturing quality.

Why Choose the A2I20H060GNR1?

NXP's A2I20H060GNR1 is designed for those who require a high-performance, reliable, and efficient RF power solution. Its robust construction and ability to deliver high power at high frequencies make it a top choice for engineers and designers looking to push the boundaries of RF technology. With NXP's reputation for quality and innovation, the A2I20H060GNR1 is a component that stands out in the market for RF power transistors.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $72.7612 $72.7612
2+ $59.7015 $119.4030
3+ $57.8359 $173.5077
4+ $55.9702 $223.8808
5+ $54.1045 $270.5225
7+ $48.5075 $339.5525
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,900 pieces
Order Increment : 1 pcs
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