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A2T18H100-25SR3

Part No A2T18H100-25SR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 2CH 65V 1.81GHZ / N--Channel Enhancement--Mode Lateral MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer NXP USA Inc.
Packaging Reel
Transistor Type LDMOS (Dual)
Frequency 1.81GHz
Gain 18.1dB
Voltage - Test 28V
Current - Test 230mA
Power - Output 18W
Voltage - Rated 65V
Manufacturer Package NI-780-4S4
Supplier Device Package NI-780-4S4
Manufacturer Pack Quantity 250
MSL Level Not Applicable
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 810678-A2T18H100-25SR3
Ultra Librarian 3D Model Ultra Librarian A2T18H100-25SR3 CAD Model

Description

The A2T18H100-25SR3 is a state-of-the-art RF power transistor designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This product is tailored for high-performance applications that require robust and reliable radio frequency amplification.

Key Features

  • Frequency Range: This transistor is optimized for use in the 1800-2000 MHz frequency range, making it ideal for telecommunications applications, including cellular base station amplifiers for GSM, CDMA, and LTE networks.
  • High Output Power: With an impressive output power of 100 watts, the A2T18H100-25SR3 is capable of delivering strong signal amplification, which is crucial for maintaining clear and reliable communication links.
  • High Gain: It offers a high gain of 25 dB, ensuring that signals are amplified significantly without the need for additional stages of amplification.
  • Efficiency: The device boasts an excellent efficiency rating, which not only reduces power consumption but also minimizes heat generation, extending the life of the product and the systems in which it is used.
  • Thermal Management: The A2T18H100-25SR3 incorporates an advanced thermal management system, which helps to maintain optimal operating temperatures, even under strenuous conditions.
  • Ruggedness: Designed to withstand harsh operating conditions, the transistor is highly rugged and can tolerate mismatched load conditions, making it a reliable choice for critical applications.

Applications

The versatility of the A2T18H100-25SR3 allows it to be used in a wide array of applications. It is particularly well-suited for RF power amplifiers in cellular base stations, as well as for use in broadcast transmitters, industrial heating, and medical applications where high-frequency and high-power amplification is required.

Quality and Reliability

NXP Semiconductors is known for its commitment to quality and reliability, and the A2T18H100-25SR3 is no exception. It is manufactured in a state-of-the-art facility and undergoes rigorous testing to ensure it meets the highest industry standards. Customers can trust this product to deliver consistent performance over its lifespan.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $104.4316 $104.4316
2+ $101.0625 $202.1250
3+ $97.6945 $293.0835
4+ $87.5883 $350.3532
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,250 pieces
Order Increment : 1 pcs
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