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AFT21S230SR5

Part No AFT21S230SR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 2.11GHZ NI780S-6 / Trans RF MOSFET N-CH 65V 7-Pin NI-780S T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Transistor Type LDMOS
Frequency 2.11GHz
Gain 16.7dB
Voltage - Test 28V
Current - Test 1.5A
Power - Output 50W
Voltage Rating DC 65V
Package NI-780S
Manufacturer Package NI-780S-6
Win Source Part Number 768330-AFT21S230SR5
Popularity Medium
Supply and Demand Status Limited
Family Name AFT21S230SR5
Introduction Date September 13, 2012
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian AFT21S230SR5 CAD Model

Description

Introducing the AFT21S230SR5 from NXP Semiconductors

The AFT21S230SR5 is a state-of-the-art RF power LDMOS transistor designed by NXP Semiconductors, a leader in the field of high-performance mixed-signal electronics. This robust and efficient transistor is specifically engineered to meet the demanding requirements of RF energy applications. Its innovative design allows for exceptional performance in a variety of uses, including but not limited to industrial, scientific, medical (ISM) applications, broadcast, and aerospace.

Key Features of the AFT21S230SR5

  • High Efficiency: The AFT21S230SR5 is optimized for high efficiency, delivering excellent thermal performance and energy savings. This makes it an ideal choice for applications where power efficiency is critical.
  • Wide Frequency Range: With an operational frequency range of 1.8 to 2000 MHz, this versatile transistor can be employed in a broad spectrum of RF applications.
  • Robust Power Output: It provides a powerful output with a pulsed CW of 230 Watts, ensuring strong signal transmission and reception for reliable communication and processing.
  • Enhanced Ruggedness: The device is designed to withstand a high voltage standing wave ratio (VSWR), which means it can tolerate mismatches in impedance without compromising performance or reliability.
  • Thermal Management: The AFT21S230SR5 comes in a thermally-enhanced package, which aids in heat dissipation, further improving its longevity and stability under high-power operation.

Applications

The AFT21S230SR5's broad frequency range and high power make it suitable for a variety of applications, including:

  • Plasma generation
  • RF heating and thermal ablation
  • Industrial drying and sealing
  • Particle accelerators
  • Radio and VHF broadcasting
  • Avionics and radar systems

With its outstanding performance and durability, the AFT21S230SR5 from NXP Semiconductors represents a top-notch solution for designers looking to enhance their RF energy systems. Its combination of efficiency, power, and ruggedness makes it a valuable component in any high-demand RF application.

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