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AFT23S160W02GSR3

Part No AFT23S160W02GSR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 2.4GHZ / Trans RF MOSFET N-CH 65V 3-Pin NI-780GS T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Transistor Type LDMOS
Frequency 2.4GHz
Gain 17.9dB
Voltage - Test 28V
Current - Test 1.1A
Power - Output 45W
Voltage Rating DC 65V
Package NI-780S-2 GW
Manufacturer Package NI-780S-2 Gull Wing
Win Source Part Number 768333-AFT23S160W02GSR3
Popularity Medium
Supply and Demand Status Limited
Family Name AFT23S160W02GS
Introduction Date October 26, 2013
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian AFT23S160W02GSR3 CAD Model

Description

Product Overview: AFT23S160W02GSR3

The AFT23S160W02GSR3 is a state-of-the-art RF power LDMOS transistor designed and manufactured by the renowned semiconductor company, NXP Semiconductors. This high-performance component is engineered to deliver exceptional power and efficiency, making it an ideal choice for a wide range of applications, including RF energy, industrial, scientific, and medical (ISM) applications, as well as radio and VHF TV broadcast transmitters.

Key Features

  • High Power Output: The AFT23S160W02GSR3 is capable of delivering a substantial 160W of continuous wave power, ensuring robust and reliable performance in demanding environments.
  • Wide Frequency Range: With an operational frequency range of 1.8 to 2000 MHz, this versatile transistor can be utilized in various applications without compromising on efficiency or power.
  • High Efficiency: The device boasts an excellent efficiency rating, which is critical for minimizing heat generation and ensuring the longevity of the component and the system it powers.
  • Integrated ESD Protection: To safeguard against electrostatic discharge events, the AFT23S160W02GSR3 comes with built-in ESD protection, enhancing the durability of the device.

Applications

The AFT23S160W02GSR3 is designed to meet the rigorous demands of a variety of applications. Its high power and efficiency make it particularly suitable for:

  • RF power amplifiers in ISM applications
  • Industrial heating, welding, and drying systems
  • Medical applications such as MRI and RF ablation
  • Radio broadcast transmitters
  • VHF television broadcast amplifiers

Product Specifications

With its robust design, the AFT23S160W02GSR3 ensures optimal performance under various conditions. It operates with a drain-source voltage (Vds) of 65V and features a high gain, which translates to less drive power required and simplified circuit design. The transistor is housed in a RoHS compliant, over-molded plastic package that is designed for excellent thermal performance and reliability.

For engineers and designers looking for a reliable and high-performing RF power solution, the AFT23S160W02GSR3 from NXP Semiconductors represents a premier choice that combines power, efficiency, and versatility in a compact and durable package.

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