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AFT26HW050GSR3

Part No AFT26HW050GSR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 2CH 65V 2.69GHZ NI780-4
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Not For New Designs
Transistor Polarity LDMOS (Dual)
Frequency 2.69GHz
Gain 14.2dB
Voltage - Test 28V
Current - Test 100mA
Power - Output 9W
Voltage Rating 65V
Case / Package NI-780GS
Win Source Part Number 1016284-AFT26HW050GSR3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AFT26HW050GSR3 CAD Model

Description

The AFT26HW050GSR3 is a high-performance Radio Frequency (RF) power LDMOS transistor designed by NXP Semiconductors. This advanced product is specifically tailored for high-efficiency applications within the RF energy market, making it an ideal component for a wide range of uses, including industrial, scientific, medical (ISM) applications, as well as RF heating, drying, and physical or chemical processing.

Key Features

  • High Power: The AFT26HW050GSR3 delivers a powerful output with a capability of up to 50 Watts CW over a broad frequency range.
  • Wide Frequency Range: This transistor operates efficiently across a frequency range from 1.8 MHz to 250 MHz, ensuring versatility for various RF applications.
  • Enhanced Ruggedness: Engineered for durability, it can withstand a VSWR of 65:1 at 32 V, providing reliability and robustness in demanding environments.
  • Integrated ESD Protection: Built-in Electrostatic Discharge (ESD) protection enhances the longevity and reliability of the device.
  • Thermal Performance: Outstanding thermal performance is achieved thanks to the over-molded plastic package that the AFT26HW050GSR3 is encapsulated in.

Applications

The AFT26HW050GSR3's versatility and high-power capability make it suitable for a range of applications, including:

  • Industrial heating and welding systems
  • Medical diagnostic and therapeutic equipment
  • RF cooking and defrosting
  • Plasma generation
  • Scientific research equipment

Quality and Reliability

NXP Semiconductors is known for its dedication to quality and reliability, and the AFT26HW050GSR3 is no exception. Manufactured with the highest standards, this transistor is designed for long-term performance, ensuring that your applications run smoothly and efficiently. With the AFT26HW050GSR3, engineers and designers can expect a product that not only meets but exceeds the rigorous demands of the modern RF energy landscape.

For detailed specifications, application notes, and additional resources, customers are encouraged to visit the official NXP Semiconductors website or contact their sales and support team.

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