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AFT26HW050SR3

Part No AFT26HW050SR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 2CH 65V 2.69GHZ NI780-4S4 / Trans RF MOSFET N-CH 65V 9-Pin NI-780-4S4 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Transistor Type LDMOS (Dual)
Frequency 2.69GHz
Gain 14.2dB
Voltage - Test 28V
Current - Test 100mA
Power - Output 9W
Voltage Rating DC 65V
Package NI-780-4S4
Manufacturer Package NI-780-4S4
Win Source Part Number 768336-AFT26HW050SR3
Popularity Medium
Supply and Demand Status Limited
Family Name AFT26HW050SR3
Introduction Date March 26, 2013
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2020
Ultra Librarian 3D Model Ultra Librarian AFT26HW050SR3 CAD Model

Description

The AFT26HW050SR3 is a state-of-the-art RF power LDMOS transistor designed and manufactured by NXP Semiconductors, a leader in the field of high-performance mixed-signal electronics. This advanced transistor is specifically tailored for high-efficiency, high-power applications across a wide range of frequencies, making it an ideal choice for RF energy applications such as industrial, scientific, and medical (ISM) applications, including RF heating, drying, and plasma lighting, as well as commercial and amateur radio communications.

Key Features

  • High Power: With an impressive output power of 50 Watts, the AFT26HW050SR3 is capable of delivering significant energy for a variety of demanding applications.
  • Broad Frequency Range: This versatile transistor operates efficiently across a broad frequency range of 1.8 to 600 MHz, ensuring flexibility and compatibility with a wide array of RF systems.
  • High Efficiency: Engineered for maximum performance, it boasts a high drain-source efficiency, which minimizes power losses and ensures optimal operation in RF energy systems.
  • Thermal Performance: The AFT26HW050SR3 is designed with an excellent thermal management system, featuring a low thermal resistance that ensures reliability and longevity even under high-temperature operating conditions.
  • Ruggedness: Durability is a key aspect of this product, with a rugged design that can withstand high voltage standing wave ratio (VSWR) conditions, making it robust against mismatches and operational stress.

Applications

The AFT26HW050SR3 is versatile enough to be used in a variety of applications, including but not limited to:

  • Industrial heating and welding equipment
  • Medical diagnostic and treatment devices
  • Plasma generation for lighting or surface treatment
  • Radio and broadcast transmitters
  • RF power amplifiers for amateur radio communications

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality and reliable components. The AFT26HW050SR3 is no exception, as it is produced with the highest manufacturing standards, ensuring that it meets or exceeds the rigorous demands of industrial and commercial applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $106.7165 $106.7165
2+ $99.2538 $198.5076
3+ $95.5224 $286.5672
4+ $91.7911 $367.1644
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Availability: 750 pieces
Order Increment : 1 pcs
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