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Same model may have multiple batches, images only for reference.
RSM002P03T2L Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RSM002P03T2L

Part No RSM002P03T2L
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 200MA VMT3
Datasheet
RSM002P03T2L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Input Capacitance 30pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 200mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VMT3
Dimension SOT-723
Win Source Part Number 027522-RSM002P03T2L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RSM002P03T2L CAD Model

Description

Rohm Semiconductor's RSM002P03T2L is a P-channel MOSFET.

  • Type: surface-mount device
  • Commonly used in: electronic circuits for power switching applications
  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 200mA
  • Ideal for: low-power applications
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
380+ $0.1322 $50.2360
925+ $0.1085 $100.3625
1,430+ $0.1051 $150.2930
1,970+ $0.1017 $200.3490
2,545+ $0.0983 $250.1735
3,405+ $0.0882 $300.3210
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 56,000 pieces
MOQ: 380 pcs
Order Increment : 1 pcs
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