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BAS40-06W/DG/C2

Part No BAS40-06W/DG/C2
Manufacturer NXP / Nexperia
Catalog Hard To Find
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Reference Date Code 1030+
Reference case SOT-323
Manufacturer NXP
Manufacturer Homepage www.nxp.com
Win Source Part Number 709623-BAS40-06W/DG/C2
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BAS40-06W/DG/C2 CAD Model

Description

The NXP BAS40-06W/DG/C2 is a high-performance Schottky diode that offers a compact and efficient solution for fast switching applications. Designed with precision and reliability in mind, this diode is a perfect choice for a wide range of electronic circuits where low forward voltage drop and fast switching are required.

Key Features:

  • Low Forward Voltage: The BAS40-06W/DG/C2 is characterized by its low forward voltage drop, which enhances system efficiency by reducing power loss during operation.
  • High Switching Speed: With its fast switching capability, this diode is ideal for high-frequency applications, contributing to better performance in circuits such as switch-mode power supplies and high-frequency rectifiers.
  • Surface-Mount Package: The device comes in a small SOT-323 (SC-70) surface-mount package, which allows for a compact design footprint and is suitable for automated assembly processes.
  • Low Capacitance: The diode's low junction capacitance ensures minimal signal distortion, making it suitable for high-speed signal switching and RF applications.
  • Reverse Voltage Protection: With a repetitive peak reverse voltage of 40V, the BAS40-06W/DG/C2 provides robust protection against reverse voltage conditions.

Applications:

The NXP BAS40-06W/DG/C2 Schottky diode is versatile and can be used in a variety of applications, including:

  • DC-DC converters
  • High-frequency rectification
  • Switching power supplies
  • Reverse polarity protection
  • Charge pump circuits
  • Voltage clamping applications
  • Protection circuits in portable devices

Product Specifications:

Parameter Value Package SOT-323 (SC-70) Maximum Repetitive Reverse Voltage (V<sub>RRM) 40V Forward Continuous Current (I<sub>F) 200mA Forward Voltage Drop (V<sub>F) 0.8V @ 100mA Junction Capacitance (C<sub>j) 10pF

For detailed information, technical specifications, and application support, it is recommended to consult the datasheet and technical resources provided by NXP Semiconductors.

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