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BC847T,115

Part No BC847T,115
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.1A SOT416
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 400mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 110 @ 2mA, 5V
Maximum Power Dissipation 150mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-75
Win Source Part Number 097161-BC847T,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BC847T,115 CAD Model

Description

Product Overview: BC847T,115 from NXP Semiconductors

The BC847T,115 is a high-quality, general-purpose NPN bipolar junction transistor (BJT) from NXP Semiconductors, designed to suit a wide range of applications. This versatile transistor is housed in a small surface-mounted SOT-23 package, making it ideal for space-constrained applications. With its low current and low voltage operation, it is particularly well-suited for use in portable devices, as well as for general-purpose switching and amplification tasks.

Key Features

  • Transistor Type: NPN - This indicates that the transistor is designed to control the flow of electrons from the collector to the emitter, and is activated by a positive current at the base.
  • Package / Case: SOT-23 - A compact, three-lead, surface mount package that is commonly used for low-power devices.
  • DC Current Gain (hFE): 200 at 2mA, 5V - The DC current gain is a measure of the transistor's ability to amplify the input signal.
  • Transition Frequency: 100MHz - This is the frequency at which the gain of the transistor falls to 1 when used as an amplifier.
  • Collector-Emitter Voltage VCEO Max: 45V - The maximum voltage that can be applied across the collector-emitter junction without causing damage.
  • Collector-Base Voltage VCBO: 50V - The maximum voltage that can be applied across the collector-base junction.
  • Emitter-Base Voltage VEBO: 5V - The maximum voltage that can be applied across the emitter-base junction.

Applications

The BC847T,115 transistor can be used in a variety of electronic circuits. It is particularly useful in:

  • Low noise stages in audio equipment.
  • Signal processing circuits of television receivers.
  • Driver stages in high-fidelity amplifiers and radio communications.
  • Control circuits in embedded systems.
  • Switching operations in consumer electronics.

Quality and Reliability

NXP Semiconductors is renowned for its commitment to quality and reliability, and the BC847T,115 is no exception. Each transistor is manufactured with stringent quality control measures to ensure consistent performance and longevity, making it a reliable choice for both commercial and industrial applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $33.2987 $66.5974
5+ $27.3227 $136.6135
7+ $26.4680 $185.2760
10+ $25.6144 $256.1440
12+ $24.7609 $297.1308
16+ $22.1991 $355.1856
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Availability: 7,600 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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