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BF1211WR

Part No BF1211WR
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel dual-gate MOS-FETs
Sample
Rohs State rohs
ECAD Module
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Manufacturer NXP
Win Source Part Number 1153058-BF1211WR
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BF1211WR CAD Model

Description

The NXP BF1211WR is a state-of-the-art, high-performance dual-gate N-channel MOSFET designed to deliver superior performance in a wide range of applications. With its advanced technology and compact size, this MOSFET is an excellent choice for RF amplification and mixing in industrial, commercial, and consumer electronics.

Key Features

  • High Gain: The BF1211WR offers high forward transconductance, providing significant gain for amplifiers and ensuring efficient signal processing.
  • Low Noise Figure: It has an extremely low noise figure, making it ideal for sensitive RF applications where signal integrity is paramount.
  • Dual-Gate Configuration: The dual-gate design allows for better control and flexibility in RF and mixer applications, providing enhanced performance over traditional single-gate MOSFETs.
  • High-Speed Switching: This MOSFET is capable of high-speed switching, which is crucial for high-frequency and pulse-width modulation applications.
  • Surface-Mount Package: The BF1211WR comes in a small SOT-343R package, which is suitable for surface-mount technology, allowing for compact PCB design and automated assembly processes.

Applications

The versatility of the NXP BF1211WR makes it suitable for a variety of applications, including:

  • RF amplifiers in mobile and wireless communication devices
  • Low-noise input stages for satellite receivers and GPS systems
  • High-frequency oscillators and mixers
  • Industrial and medical imaging systems
  • Automotive applications, such as radar and navigation systems

Technical Specifications

The BF1211WR boasts impressive technical specifications:

  • Drain-Source Voltage (Vds): 8 V
  • Gate-Source Voltage (Vgs): ±8 V
  • Continuous Drain Current (Id): 30 mA
  • Power Dissipation (Pd): 200 mW
  • Operating Temperature Range: -55°C to +150°C

In conclusion, the NXP BF1211WR MOSFET is a robust and reliable component that offers excellent performance for RF applications. Its dual-gate configuration, low noise, and high-speed switching capabilities make it a top choice for designers looking to optimize their electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.8979 $57.9580
49+ $2.3781 $116.5269
76+ $2.3042 $175.1192
104+ $2.2292 $231.8368
134+ $2.1552 $288.7968
180+ $1.9323 $347.8140
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Availability: 5,000 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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