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BF861B

Part No BF861B
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel junction FETs
Sample
Rohs State rohs
ECAD Module
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Manufacturer NXP
Win Source Part Number 1153129-BF861B
Manufacturer Homepage www.nxp.com
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name BF861B
Introduction Date April 14, 1995
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian BF861B CAD Model

Description

The NXP BF861B represents a pinnacle of innovation in the field of junction field-effect transistors (JFETs). This particular device is designed for high-performance applications that require low noise and low leakage currents. As a part of NXP's extensive JFET portfolio, the BF861B is engineered to deliver exceptional signal amplification and switching capabilities, making it an ideal choice for a diverse range of electronic circuits.

Key Features

  • Low Noise: The BF861B is optimized for low noise performance, ensuring clear and precise signal processing in sensitive audio and instrumentation applications.
  • High Input Impedance: With its high input impedance, the BF861B minimizes the loading effect on preceding circuit stages, preserving signal integrity and reducing power consumption.
  • Low Leakage Current: The device exhibits extremely low leakage currents, which is crucial for maintaining the stability and accuracy of the circuit over time.
  • High Breakdown Voltage: The BF861B boasts a high breakdown voltage, providing a wide safety margin for operation under various conditions and preventing breakdown-related failures.

Applications

The versatility of the NXP BF861B JFET makes it suitable for a broad spectrum of applications, including but not limited to:

  • High-fidelity audio preamplifiers and mixers
  • Precision analog signal processing
  • Electronic measurement and instrumentation
  • Oscilloscopes and signal generators
  • Voltage controlled oscillators and filters

Technical Specifications

Parameter Value Configuration Single Transistor Polarity N-Channel Drain-Source Breakdown Voltage 25 V Gate-Source Cutoff Voltage -0.5 V to -3 V Continuous Drain Current 10 mA Power Dissipation 300 mW Operating Temperature Range -55°C to +150°C

With its robust design and superior performance characteristics, the NXP BF861B JFET is an excellent choice for designers looking to enhance the reliability and functionality of their electronic systems.

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