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BFG425W,115

Part No BFG425W,115
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description TRANS NPN 4.5V 25GHZ SOT-343R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 4.5V
Frequency - Transition 25GHz
Noise Figure (dB Typ @ f) 0.8dB to 1.2dB @ 900MHz to 2GHz
Gain 20dB
Maximum Power Dissipation 135mW
Typical Gain (hFE) (Min) 50 @ 25mA, 2V
Maximum Current Collector 30mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CMPAK-4
Win Source Part Number 096553-BFG425W,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BFG425W,115 CAD Model

Description

Product Overview: BFG425W,115 by NXP

The BFG425W,115 is a cutting-edge RF transistor developed by NXP Semiconductors, a leader in the electronics industry. This high-performance product is designed to meet the rigorous demands of modern wireless communication systems. With its remarkable features and specifications, the BFG425W,115 is an ideal choice for a wide range of applications, including but not limited to mobile communications, satellite TV systems, and high-frequency amplifiers.

Key Features

  • High gain performance: The BFG425W,115 boasts a high power gain, which is crucial for efficient signal amplification in RF applications.
  • Broad frequency range: This transistor is capable of operating over a wide frequency range, making it versatile for various communication bands.
  • Low noise figure: The low noise characteristics of the BFG425W,115 ensure clear signal amplification with minimal distortion, which is essential for quality communication.
  • High efficiency: Designed for maximum efficiency, this product conserves energy while delivering optimal performance, which is vital for battery-powered devices.
  • Robustness: The BFG425W,115 is built to withstand tough conditions, ensuring reliability and longevity in the field.

Product Specifications

The BFG425W,115 transistor is a silicon NPN device that comes in a small SOT343 package, which is suitable for surface-mounted technology (SMT). Its transition frequency is high, and it has a collector-emitter voltage of 12V. The collector current is rated at 60mA, which allows for substantial signal handling capability.

Applications

Due to its robust design and superior performance, the BFG425W,115 is extensively used in:

  • Driver stages in high-frequency amplifiers
  • Low-noise input stages for satellite receivers
  • Wireless communication devices such as GSM, PCS, and DECT systems
  • Any RF circuit requiring a high-quality signal amplification solution

With its exceptional features and proven reliability, the BFG425W,115 from NXP Semiconductors is a top-tier component for designers and engineers looking to enhance the performance of their RF systems. Its combination of efficiency, durability, and versatility makes it an indispensable part of any high-frequency electronic application.

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3950 $59.2500
360+ $0.3246 $116.8560
555+ $0.3142 $174.3810
765+ $0.3038 $232.4070
985+ $0.2945 $290.0825
1,320+ $0.2633 $347.5560
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Availability: 11,100 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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