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Same model may have multiple batches, images only for reference.
IRF7530PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7530PBF

Part No IRF7530PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 5.4A MICRO8
Datasheet
IRF7530PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.4A
Maximum Rds On at Id,Vgs 30 mOhm @ 5.4A, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 26nC @ 4.5V
Max Input Capacitance 1310pF @ 15V
Maximum Power Dissipation 1.3W
Mounting SMD (SMT)
Case / Package Micro8
Win Source Part Number 1046681-IRF7530PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7530PBF CAD Model

Description

The IRF7530PBF is a dual N-channel MOSFET transistor manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 20V
  • Maximum Continuous Drain Current: 5.4A @ 25°C
  • Gate-Source Threshold Voltage: 1.2V @ 250μA
  • Max Gate Charge: 26nC @ 4.5V
  • Technology: MOSFET
  • Mounting Type: SMD (SMT)
  • Package/Case: Micro8
  • Category: Discrete Semiconductor Products

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35+ $2.8657 $100.2995
55+ $2.7762 $152.6910
75+ $2.6866 $201.4950
97+ $2.5971 $251.9187
129+ $2.3284 $300.3636
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